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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.03.10 Page No. : 1/6 H06N60 Series N-Channel Power Field Effect Transistor H06N60 Series Pin Assignment Tab 3 Description Tab 2 1 3-Lead Plastic TO-263 Package Code: U Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients. 3-Lead Plastic TO-220AB Package Code: E Pin 1: Gate Pin 2 & Tab: Drain Pin 3: Source 2 3 1 Features * Robust High Voltage Termination * Avalanc he Energy Specified * Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode * Diode is Characterized for Use in Bridge Circuits * IDSS and VDS(on) Specified at Elevated Temperature 1 2 3 3-Lead Plastic TO-220FP Package Code: F Pin 1: Gate Pin 2: Drain Pin 3: Source D G S H06N60 Series Symbol: Absolute Maximum Ratings Symbol ID IDM VGS Parameter Drain to Current (Continuous) Drain to Current (Pulsed) Gate-to-Source Voltage (Continue) Total Power Dissipation (TC=25 C) H06N60U (TO-263) H06N60E (TO-220AB) H06N60F (TO-220FP) Derate above 25OC H06N60U (TO-263) H06N60E (TO-220AB) H06N60F (TO-220FP) Operating Temperature Range Storage Temperature Range Single Pulse Drain-to-Source Avalanche Enrgy-Tj=25 C (VDD=100V, VGS=10V, IL=6A, L=10mH, RG=25) Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 10 seconds O o Value 6 24 20 110 110 40 0.58 0.58 0.33 -55 to 150 -55 to 150 250 260 Units A A V W W W W/C W/C W/oC O O PD Tj Tstg EAS TL C C mJ C Note: 1. VDD=50V, ID=10A 2. Pulse Width and frequency is limited by Tj(max) and thermal response H06N60U, H06N60E, H06N60F HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Thermal Characteristics Symbol RJC RJA Parameter TO-263 Thermal Resistance Junction to Case Max. Thermal Resistance Junction to Ambient Max. TO-220AB TO-220FP 62 Value Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.03.10 Page No. : 2/6 Units 1.7 1.7 3.3 O O C/W C/W ELectrical Characteristics (TJ=25OC, unless otherwise specified) Symbol V(BR)DSS IDSS IGSSF IGSSR VGS(th) RDS(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd LD LS Characteristic Drain-Source Breakdown Voltage (VGS=0V, ID=250uA) Drain-Source Leakage Current (VDS=600V, VGS=0V) Drain-Source Leakage Current (VDS=600V, VGS=0V, Tj=125 C) Gate-Source Leakage Current-Forward (Vgsf=20V, VDS=0V) Gate-Source Leakage Current-Reverse (Vgsr=-20V, VDS=0V) Gate Threshold Voltage (VDS=VGS, ID=250uA) Static Drain-Source On-Resistance (VGS=10V, ID=3.6A)* Forward Transconductance (VDS=15V, ID=3.6A)* Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Internal Drain Inductance (Measured from the drain lead 0.25" from package to center of die) Internal Drain Inductance (Measured from the drain lead 0.25" from package to source bond pad) (VDS=300V, ID=6A, VGS=10V)* (VDD=300V, ID=6A, RG=9.1, VGS=10V)* VGS=0V, VDS=25V, f=1MHz O Min. 600 2 2 - Typ. 3 1 4 1498 158 29 14 19 40 26 35.5 8.1 14.1 4.5 7.5 Max. 1 50 100 -100 4 1.2 50 - Unit V uA uA nA nA V S pF ns nC nH nH *: Pulse Test: Pulse Width 300us, Duty Cycle2% Source-Drain Diode Symbol VSD ton trr Forward On Voltage(1) Forward Turn-On Time Reverse Recovery Time Characteristic IS=6A, VGS=0V, TJ=25 C IS=6A, dIS/dt=100A/us o Min. - Typ. ** 266 Max. 1.2 - Units V ns ns **: Negligible, Dominated by circuit inductance H06N60U, H06N60E, H06N60F HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve On-Region Characteristic 10 1.6 Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.03.10 Page No. : 3/6 Typical On-Resistance & Drain Current Drain-Source On-Resistance-RDS(ON) VGS=10V 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 VGS=10V 9 ID, Drain-Source Current (A) . 8 7 VGS=8V VGS=6V 6 5 VGS=5V 4 3 2 1 0 0 2 4 6 8 10 VGS=4 0 1 2 3 4 5 6 7 8 9 10 11 12 VDS, Drain-Source Voltage(V) Drain Current-ID (A) Drain Current Variation with Gate Voltage & Temperature 6 VDS=10 V 5 Typical On-Resistance & Drain Current 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 Tc= 25C 4 Drain-Source On-Resistance-RDS(ON) Drain-Source Current-ID (A) 3 VGS=10V VGS=15V 2 1 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 0 1 2 3 4 5 6 7 8 9 10 11 12 Gate-Source Voltage-VGS (V) Drain Current-ID (A) On Resistance Variation with Temperature 2.50 VGS=10 V Capacitance Characteristics 2000 Normalized Drain-Source OnResistance-RDS(ON) 2.00 1500 Capacitance (pF) Ciss Coss Crss 500 1.50 ID=3A 1000 1.00 0.50 0.00 0 25 50 75 100 o Case Temperature-Tc ( C) 125 150 0 0.1 1 10 100 VDS, Deain-Source Voltage (V) H06N60U, H06N60E, H06N60F HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-220AB Dimension Marking: A D B E C F Pb Free Mark Pb-Free: " . " (Note) Normal: None H Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.03.10 Page No. : 4/6 E 0 6N60 Date Code Control Code H I G Tab P L J M 3 2 1 O N K Note: Green label is used for pb-free packing Pin Style: 1.Gate 2 & Tab.Drain 3.Source Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 DIM A B C D E F G H I J K L M N O P Min. 5.58 8.38 4.40 1.15 0.35 2.03 9.66 3.00 0.75 2.54 1.14 12.70 14.48 Max. 7.49 8.90 4.70 1.39 0.60 2.92 10.28 *16.25 *3.83 4.00 0.95 3.42 1.40 *2.54 14.27 15.87 *: Typical, Unit: mm 3-Lead TO-220AB Plastic Package HSMC Package Code: E TO-220FP Dimension Marking: A 1 D 4 EO C Pb Free Mark Pb-Free: " . " (Note) Normal: None H F 0 6N60 Date Code Control Code 2 3 5 I N 3 G J Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 F 2 K 1 M L DIM Min. A 6.48 C 4.40 D 2.34 E 0.45 F 9.80 G 3.10 I 2.70 J 0.60 K 2.34 L 12.48 M 15.67 N 0.90 O 2.00 1/2/4/5 3 Max. 7.40 4.90 3.00 0.80 10.36 3.60 3.43 1.00 2.74 13.60 16.20 1.47 2.96 *5o *27o *: Typical, Unit: mm 3-Lead TO-220FP Plastic Package HSMC Package Code: F H06N60U, H06N60E, H06N60F HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-263 Dimension Marking: A a1 G C D r1 1 H 2 3 F P Q E R r2 I K 2-r2 a2 J K a2 a3 S O E N r2 F B a2 DP 3-r2 L M X Y 2Xr3 W D T U V Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.03.10 Page No. : 5/6 Pb Free Mark Pb-Free: " . " (Note) H Normal: None U 0 6N6 0 Date Code Control Code Note: Green label is used for pb-free packing Pin Style: 1.Gate 2.Drain 3.Source Material: * Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) * Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 T 3-Lead TO-263 Plastic Surface Mount Package HSMC Package Code: U ( ): Reference Dimension, Unit: mm DIM A B C D E F G H I J K Min. 9.70 1.00 9.00 4.70 15.00 1.20 1.17 0.70 2.34 Max. 10.10 1.40 (4.60) 9.40 5.10 15.60 (0.40) 1.60 1.37 0.90 2.74 DIM L M N O P Q R S T U V Max. 4.30 1.25 -0.05 2.20 1.90 2.24 0.45 9.80 - Max. 4.70 1.40 0.25 2.60 2.10 (0.75) 2.84 0.60 10.20 (7.00) (4.00) DIM W X Y a1 a2 a3 r1 r2 r3 DP Min. - Max. (7.20) (0.40) (0.90) (15o) (3o) 0o~3o (1.50) 0.30 (0.45) (0.20) Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: * Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 * Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 H06N60U, H06N60E, H06N60F HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC's Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : MOS200402 Issued Date : 2004.04.01 Revised Date : 2005.03.10 Page No. : 6/6 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly <3 C/sec 100oC 150oC 60~120 sec <3oC/sec 183oC 60~150 sec 240 C +0/-5 C 10~30 sec <6oC/sec <6 minutes o o o Pb-Free Assembly <3oC/sec 150oC 200oC 60~180 sec <3oC/sec 217oC 60~150 sec 260oC +0/-5oC 20~40 sec <6oC/sec <8 minutes Peak temperature 245 C 5 C o o Dipping time 5sec 1sec 5sec 1sec 260 C +0/-5 C o o H06N60U, H06N60E, H06N60F HSMC Product Specification |
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